منابع مشابه
Ballistic anisotropic magnetoresistance.
Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance-a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from the effect of the spin-orbit interaction on the electronic band structure which leads to a change in the number of bands crossing the Fermi energy when the magnetizati...
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We establish theoretically that in nonmagnetic semiconducting bilayer or multilayer thin film systems rolled up into compact quasi-one-dimensional nanoarchitectures, the ballistic magnetoresistance is very anisotropic: conductances depend strongly on the direction of an externally applied magnetic field. This phenomenon originates from the curved open geometry of rolled-up nanotubes, which lead...
متن کاملArtifacts that mimic ballistic magnetoresistance
We have investigated the circumstances underlying recent reports of very large values of ballistic magnetoresistance (BMR) in nanocontacts between magnetic wires. We find that the geometries used are subject to artifacts due to motion of the wires that distort the nanocontact thereby changing its electrical resistance. Since these nanocontacts are often of atomic scale, reliable experiments wou...
متن کاملAnisotropic- Magnetoresistance Integrated Sensors
In this paper. a short overview is presented of the most widely used types of solid state magnetic sensor. These sensors are applied in many areas, such as the measurement of magnetic fields and in compasses, angle/position sensors and current sensing. Hall effect, AMR (Anisotropic Magnetorestance-effect) and GMR (Giant Magnetoresistance-effect) sensors are the most frequently used. In spite of...
متن کاملAnisotropic giant magnetoresistance in NbSb2
The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10(5)% in 2 K and 9 T field, and 4.3 × 10(6)% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transi...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2005
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.94.127203